High Intensity Focused Ultrasound (HIFU) technology is to focus ultrasound on a single point to produce high energy, function on the dermis and SMAS layer of skin, stimulate the proliferation and recombination of collagen, effectively achieve the effect of compact contour and smoothing lines.
Focused ultrasound does not heat the skin surface, nor does it need to pass through the skin as a medium for the transmission of laser energy, so it does not affect the tissue on the skin surface and the tissue through which the laser passes, of course, there will be no excessive heat residue on the skin surface. In this way, the epidermis will not be affected by heat, which can reduce the Eastern people's thermal reaction easily, and greatly reduce the chance of scald. Focused ultrasoundtherapy produces thermal coagulation points in the SMAS layer, and the thermal effect diffuses outward from the coagulation points, so the heat source is concentrated in the SMAS layer to be treated. It can produce more collagen denaturation.
HIFU Piezoelectric Ceramic Parts Ultrasonic Transducer Component,Piezo Crystal For Vibration Transducer,Piezoelectric Ultrasonic Rings,High Power Ultrasonic Machining Zibo Yuhai Electronic Ceramic Co., Ltd. , https://www.yhpiezo.com
In the past few years, due to the serious structural overcapacity of LED epitaxial chips in China and the world, the problem of continuous decline in chip prices has been highlighted. Most chip companies have long been on the margin of profit and loss, and their operating conditions are highly volatile.
As the subsidies of the Chinese mainland government gradually tilt from the upstream to the downstream, chip companies must now look for more economical cost control solutions to make up for profits.
Paul Beaulieu, vice president of sapphire materials, said that the HVPE system, which replaces the nGaN and uGaN growth processes in MOCVD, can save more than 80% of the use of consumables such as chip gases. After the HVPE system is used in the chip factory, the crystal growth rate will increase significantly, and the disguise will increase the capacity of MOCVD. The LED chip factory, which is supplemented with HVPE system expansion capacity, can save up to 25% of the combined cost.
Paul Beaulieu said that the current MOCVD device chip production process using Aixtron or Veeeo is to grow 6 layers including uGaN, nGaN and SLS on the sapphire substrate, but the growth of uGaN and nGaN is relatively simple, but still consumes Time. After using the HVPE system, the growth of uGaN and nGaN can be accelerated, and the epitaxial fabrication time can be shortened.
“With the sapphire procurement standard, the HVPE system will be added to the current MOCVD equipment line that produces 5μm GaN (gallium nitride) layers, and the overall output of the LED epitaxial line will increase. Each HVPE device produces 2 inches of GaN ( The capacity of the gallium nitride) epitaxial substrate is 270K/year, the capacity of the 4-inch GaN epitaxial substrate is 65K/year, and the capacity of the 6-inch GaN epitaxial substrate is 29K/year.†Paul Beaulieu said, “Simply, HVPE is added. The equipment is an auxiliary MOCVD equipment line with twice the capacity." 
At the press conference of the day, GTAT also released the world's first commercial SiC (silicon carbide) crystal growth furnace, which will grow silicon carbide high-temperature semiconductor materials for power electronics equipment. GTAT leverages its in-depth expertise in crystal growth technology to provide customers with a highly reliable and proven platform for the “transformation from the laboratory to the factory†to help customers begin mass production of SiC crystal blocks.
The launch of new products, as well as the increase in LED upstream market, will drive GTAT revenue and net profit out of the rebound in two consecutive quarters after a trough in the fourth quarter of last year. GTAT's financial report shows that as of the end of the second quarter of 2013, the company's net profit was reduced from the loss of $ 159 million in the fourth quarter of last year to $ 11.95 million in the second quarter of this year. The stock price also rose from a low of $2.66 last year to a maximum of $10.40, up nearly 291%.
[Note: This article is the exclusive report of Gaogong LED . Please reprint the agreement in advance. For legal reprint, please refer to: Gaogong LED copyright maintenance - "Anti-infringement action" statement will be deemed to be illegally reprinted, this website will be held legally responsible! 】 
[Text / high -tech LED reporter Long Zonghui] Recently, the US sapphire crystal growth furnace company - GTAT has officially released HVPE-based chip low-cost and Sic (silicon carbide) crystal growth furnace in the Chinese market.